IBM has been investigating graphene for some time now, and today, through US patent application number 20120235118, we get another piece of insight into their technology. The patent describes the use of nitrides as the gate dielectric in graphene MOSFET transistors. The gate dielectric is a necessary spacer layer which provides the switching function of transistors used in practically all electronic devices today. By using nitrides, chemical compounds containing nitrogen, as the gate dielectric, this proposal solves the issues of damage done to graphene while depositing more common gate dielectrics. Nitrides can be deposited onto graphene without reducing its quality, resulting in higher yield of devices. IBM has hinted on several occasions that they are close to commercial production of graphene-based integrated circuits.
By Marko Spasenovic on September 20, 2012
Marko is a scientific researcher (PhD in Physics, University of Twente, NL), with experience in graphene and other nanomaterials. He is the owner of Graphene Tracker, Assistant Professor at the Institute of Physics in Belgrade, blogger and online content manager for Graphenea, co-founder of 2D Atomic Crystals (www.2d-atomicrystals.com), and a member of the Advisory Board of the Graphene Stakeholders Association.